Academic Programs for the 10th Anniversary of the Establishment of the Institute for Advanced Study of Shenzhen University (Session 21)
Topic: Chalcogenide Photovoltaics: Material Development and Structural Evolution
Presenter： Researcher 王在伟/Zaiwei Wang (Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences)
moderator： 谢海兵/Xie Haibing
time： Wednesday, May 15, 2024 at 10:00 a.m.
location： 207 Zhi Zhi Building, Shenzhen University
Guests Profile
Zaiwei Wang is a researcher of Carbon Neutral Research Institute of Shenzhen Institutes of Advanced Technology (SIAT), Chinese Academy of Sciences (Academician Cheng Huiming’s group), a recipient of the National High-level Overseas Talent Youth Program, and a category B “Peacock of Pengcheng” special position in Shenzhen. He received his M.S. degree from Qingdao Institute of Energy, Chinese Academy of Sciences (supervised by Prof. Shuping Pang and Guanglei Cui), and Ph.D. degree from École Polytechnique Fédérale de Lausanne, Switzerland (supervised by Prof. Anders Hagfeldt), and then he went to the University of Toronto to do post-doctoral work in the group of Prof. Edward Sargent with the financial support of Banting Postdoctoral Fellowship. His research focuses on chalcogenide materials and their applications in multi-junction photovoltaic devices. He has published more than ten papers in Nature, Nat. Energy, Joule, Matter, Nat. Commun, Angew. Chem. In, Ed, JACS, Adv. Mater. and other journals as the first author or co-author. He is also a member of APL energy advisory board.
Report Abstracts
Since 2009, when Prof. Miyasaka et al. first reported the use of amidine-lead-iodine in dye-sensitized devices to prepare the first chalcogenide solar cells, chalcogenide solar cells have made great progress in both efficiency and stability, in which the development of chalcogenide materials and their related film-forming processes and the evolution of device structures have played an important role. In this presentation, the development of chalcogenide materials will be described in the context of the speaker’s work, including the realization of homogeneous chalcogenide films by methylamine gas repair technology, and additives to realize pure-phase methamidophilic lead-iodine chalcogenide films and to realize interfacial improvement of inorganic chalcogenides. For the evolution of device structure, the evolution of devices from single junction, to two junctions to multi-junction will be described, including the realization of all-calcite triple-junction photovoltaics with record efficiency and stability through elemental doping based on the discovered mechanism of increasing lattice distortion to inhibit photo-induced phase separation. Finally, an outlook on chalcogenide photovoltaics will be given in terms of both materials and device structures.